onsemi SGP10N60RUFDTU
$ 1.11
EOL
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Inventory History
3 month trend: -0.07%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
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Descriptions
Descriptions of onsemi SGP10N60RUFDTU provided by its distributors.
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 10A, Short Circuit Rated
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220 Rohs Compliant: Yes |Onsemi SGP10N60RUFDTU
Discrete, Short Circuit Rated IGBT with Diode
75W 2.5V 600V 16A TO-220-3 10.1mm*4.7mm*9.4mm
INSULATED GATE BIPOLAR TRANSISTO
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating10 A
Element ConfigurationSingle
Fall Time220 ns
Max Breakdown Voltage600 V
Max Collector Current16 A
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Reverse Recovery Time42 ns
Voltage Rating (DC)600 V
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements