onsemi HGTG12N60C3D

Name: onsemi HGTG12N60C3D
Brand: onsemi
SKU: HGTG12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

$ 2.393

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min
Arrow Electronics	HGTG12N60C3D	1	1	1.265	1.265	1.265	1.265	1.265
Rochester Electronics	HGTG12N60C3D	36				3.930	3.520	3.310	20h
element14 APAC	HGTG12N60C3D	0	1	10.200*	5.490*	5.022*	4.819*	4.819*	9h
Farnell	HGTG12N60C3D	0	1	7.190*	5.537*	4.812*	3.723*	3.723*	20h
Win Source	WS-HGTG12N60C3D	7,800	45			1.346	0.897	0.897	21h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTG12N60C3D.

IHS

Datasheet9 pages4 years ago

Datasheet0 pages0 years ago

onsemi

Farnell

Fairchild Semiconductor

Newark

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-01-01

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2021-07-29

LTD Date2022-01-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi HGTG12N60C3D provided by its distributors.

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

onsemi

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail

Verical

IGBT, N, 3-TO-247; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 104W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati

Farnell

Single Igbt, 600V, 24A; Collector Current:24A; Power Dissipation:104W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG12N60C3D

Newark

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.

Fairchild Semiconductor