Renesas CM200DY-12NF

Name: Renesas CM200DY-12NF
Brand: Renesas
SKU: CM200DY-12NF

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel

$ 107.35

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min
Richardson RFPD	CM200DY-12NF	Contact	10		107.35	107.35	107.35	107.35	12h
ATI ACCURATE TECHNOLOGY	CM200DY-12NF-MITSUBISHI	11		178.50	151.73	151.73	151.73	151.73	6h
Anlinkda	CM200DY-12NF	146		147.97	132.53	113.52	111.21	106.61	2d
Williams Automation	2046070	20		180.00	180.00	180.00	180.00	180.00	2d
Abacus Technologies	CM200DY-12NF	119							>1wk

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM200DY-12NF.

Official Datasheet7 years ago

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions

Descriptions of Renesas CM200DY-12NF provided by its distributors.

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 600V 200A 650W 4-Pin

Verical

IGBT MODULE, 600V, 200A; DC Collector Cu; IGBT MODULE, 600V, 200A; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 650W; Junction Temperature, Tj Max: 150°C; IGBT Termina

Farnell

Igbt Module, 600V, 200A; Transistor, Polaridad:Canal N; Corriente De Colector Dc:200A; Tensión De Saturación Colector-Emisor Vce(On):600V; Disipación De Potencia Pd:650W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:7 |Mitsubishi Electric CM200DY-12NF

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