Renesas CM200DU-24H
NRND
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-03-01
Lifecycle StatusNRND (Last Updated: 4 months ago)
Descriptions
Descriptions of Renesas CM200DU-24H provided by its distributors.
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
IGBT MODULE, 1.2KV, 200A, MODULE
Igbt Module, 1.2Kv, 200A, Module; Transistor, Polaridad:Canal N; Corriente De Colector Dc:200A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:1.13Kw; Tensión Colector Emisor V(Br)Ceo:1.2Kv |Mitsubishi Electric CM200DU-24H
IGBT MODULE, 1.2KV, 200A, MODULE; Transi; IGBT MODULE, 1.2KV, 200A, MODULE; Transistor Polarity: N Channel; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 1.13kW; Collector Emitter Voltage V(br)ceo: 1.2kV; No. of Pins: 7Pins
Manufacturer Aliases
Renesas has several brands around the world that distributors may use as alternate names. Renesas may also be known as the following names:
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
Technical Specifications
Physical
Number of Pins7
Number of Terminals7
Technical
Collector Emitter Saturation Voltage3.7 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current200 A
Max Operating Temperature150 °C
Max Power Dissipation1.13 kW
Number of Elements2