Infineon IRGB14C40LPBF

Name: Infineon IRGB14C40LPBF
Brand: Infineon
SKU: IRGB14C40LPBF

IRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB

$ 3.03

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRGB14C40LPBF	42					1.480	1.230	1.100	12h
RS (Formerly Allied Electronics)		IRGB14C40LPBF	0	1	Bulk	5.480	4.830	4.830	4.830	4.830	3h
Farnell		IRGB14C40LPBF	0	1		3.138*	2.357*	1.912*	1.374*	1.374*	11h
Microchip USA		IRGB14C40LPBF	362	300	Bulk				7.540	7.540	3d
Win Source	2	WS-IRGB14C40LPBF	1,000	22				1.837	1.541	1.541	13h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB14C40LPBF.

IHS

Datasheet12 pages21 years ago

_legacy Avnet

Newark

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-10-15

LTD Date2020-04-15

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Descriptions

Descriptions of Infineon IRGB14C40LPBF provided by its distributors.

IRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB

Future Electronics

Trans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB

Avnet

430V Low-Vceon Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 430 V Collector-emitter saturation voltage: 1.4 V Power dissipation: 125 W

Distrelec

Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):1.75V; Power Dissipation, Pd:125W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 430V, 20A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:430V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Clamping Voltage:430V; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:IRGB14C40LPbF; Fall Time Max:2.8ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Rise Time:2400ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:430V

element14 APAC