Infineon IRFI4212H-117P

Name: Infineon IRFI4212H-117P
Brand: Infineon
SKU: IRFI4212H-117P

100V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package

$ 1.801

Obsolete

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFI4212H-117P	7					1.110	0.921	0.821	41m
RS (Formerly Allied Electronics)	IRFI4212H-117P	0	2	Bulk		2.800	2.680	2.680	2.680	14h
Microchip USA	IRFI4212H-117P	321	300	Tray				5.928	5.928	3d
Weyland Electronics Group Pte. Ltd.	IRFI4212H-117P	984	1	Tape & Reel	0.897	0.897	0.897	0.897	0.897	2d
Win Source	WS-IRFI4212H-117P	28,260	40				1.073	0.872	0.872	2h

Inventory History

3 month trend: +0.00%

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFI4212H-117P.

IHS

Datasheet8 pages19 years ago

Datasheet7 pages19 years ago

iiiC

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-08-21

Lifecycle StatusObsolete (Last Updated: 4 weeks ago)

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Descriptions

Descriptions of Infineon IRFI4212H-117P provided by its distributors.

100V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package

International Rectifier

MOSFET, Dual N Ch., Digital Audio, 5-PIN TO-220, 100V, 58MOHM, 11A, 6.9 NC

RS (Formerly Allied Electronics)

Trans MOSFET N-CH Si 100V 11A 5-Pin(5+Tab) TO-220FP Tube / MOSFET 2N-CH 100V 11A TO-220FP-5

Win Source

Dual N-Channel 100 V 72.5 mOhm 18 nC HEXFET® Power Mosfet - TO-220-5

Future Electronics

18W 20V 5V@ 250¦ÌA 18nC@ 10V 2N 100V 72.5m¦¸@ 6.6A,10V 11A 490pF@50V TO-220F-5 16.53mm

UnikeyIC

MOSFET, NN CH, 100V, TO-220 F-PAK; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:100V; Module Configuration:Dual; On Resistance Rds(on):58mohm; Power Dissipation Pd:18W

element14 APAC

Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Integrated Half Bridge package; Optimized for Class-D Audio Amplifier Applications; Low Qrr for better THD and improved efficiency; Low Qg and Qsw for Better THD and Improved Efficiency | Target Applications: Class D Audio

Infineon