Infineon IPB80N03S4L02ATMA1
$ 1.11
Obsolete
Price and Stock
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Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB80N03S4L02ATMA1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-02-08
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Descriptions
Descriptions of Infineon IPB80N03S4L02ATMA1 provided by its distributors.
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance9.75 nF
Max Dual Supply Voltage30 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation136 W
Rds On Max2.4 mΩ
Rise Time9 ns
Turn-Off Delay Time62 ns
Turn-On Delay Time14 ns
Dimensions
Height4.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB80N03S4L02ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Compliance Statements