Infineon IPB600N25N3GATMA1

Name: Infineon IPB600N25N3GATMA1
Brand: Infineon
SKU: IPB600N25N3GATMA1

Power MOSFET, N Channel, 250 V, 25 A, 0.051 ohm, TO-263 (D2PAK), Surface Mount

$ 1.339

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Distributor		SKU		Min	Pkg
Newark	2	IPB600N25N3GATMA1	982	1	Cut Tape	3.700	2.420	1.940	1.940	1.940
Arrow Electronics		IPB600N25N3GATMA1	2,608	1		3.264	2.208	1.608	1.237	1.161
Rochester Electronics		IPB600N25N3GATMA1	347					1.590	1.320	1.180	1d
DigiKey	3	IPB600N25N3GATMA1CT-ND	6,177	1	Cut Tape	3.850	2.514	1.756	1.434	1.434
Avnet		IPB600N25N3GATMA1	0	1K					1.339	1.202	2d

Inventory History

3 month trend: +1.45%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB600N25N3GATMA1.

Official Datasheet12 years ago

Inventory History

3 month trend:

+1.45%

CAD Models

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Supply Chain

Country of OriginAustria, Malaysia, Mexico, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-10-23

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

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Descriptions

Descriptions of Infineon IPB600N25N3GATMA1 provided by its distributors.

Power MOSFET, N Channel, 250 V, 25 A, 0.051 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Win Source

Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

element14 APAC

Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Infineon