Infineon FF900R12IP4BOSA2

Name: Infineon FF900R12IP4BOSA2
Brand: Infineon
SKU: FF900R12IP4BOSA2

1200 V, 900 A dual IGBT module, AG-PRIME2-1-10, RoHS

$ 394.854

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Distributor	SKU		Min	Pkg
Arrow Electronics	FF900R12IP4BOSA2	3	1		413.85	413.85	413.85	413.85	413.85
Rochester Electronics	FF900R12IP4BOSA2	48			359.67	359.67	338.09	316.51	316.51	9h
DigiKey	448-FF900R12IP4BOSA2-ND	24	1	Tray	384.63	384.63	375.85	375.85	375.85
Avnet	FF900R12IP4BOSA2	0	3			406.33	375.85	375.85	375.85	2d
Future Electronics	FF900R12IP4BOSA2	0	3	Tray		499.68	491.12	491.12	491.12

Inventory History

3 month trend: -16.54%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FF900R12IP4BOSA2.

IHS

Datasheet9 pages0 years ago

_legacy Avnet

Newark

iiiC

Inventory History

3 month trend:

-16.54%

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Supply Chain

Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-24

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

Descriptions

Descriptions of Infineon FF900R12IP4BOSA2 provided by its distributors.

1200 V, 900 A dual IGBT module, AG-PRIME2-1-10, RoHS

Infineon SCT

PrimePACK™ 2 1200 V, 900 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and soft switching chip. Also available with pre-applied Thermal Interface Material.

Infineon

Igbt Module; Continuous Collector Current:900A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:5.1Kw; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kv; Product Range:- |Infineon FF900R12IP4

Newark

IGBT, H/B NTC, 1200V, 900A, PRIMEPA; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:5.1kW

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