GeneSiC Semiconductor G3R350MT12J
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Download datasheets and manufacturer documentation for GeneSiC Semiconductor G3R350MT12J.
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
Descriptions
Descriptions of GeneSiC Semiconductor G3R350MT12J provided by its distributors.
1200V 350mΩ TO-263-7 G3R™ SiC MOSFET
Trans MOSFET N-CH SiC 1.2KV 10A 8-Pin(7+Tab) TO-263
场效应管, MOSFET, SIC, N沟道, 1.2KV, 11A, 75W;
Power Field-Effect Transistor, 10A I(D), 1200V, 0.395ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
Sic Mosfet, N-Ch, 1.2Kv, 11A, 75W; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:15V; Power Dissipation:75W Rohs Compliant: Yes |Genesic G3R350MT12J
Manufacturer Aliases
GeneSiC Semiconductor has several brands around the world that distributors may use as alternate names. GeneSiC Semiconductor may also be known as the following names:
- GENESIC
- GENESIC SEMI
- GENESIC SEMICONDUCTOR INC
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CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Terminals7
Technical
Continuous Drain Current (ID)10 A
Drain to Source Resistance395 mΩ
Max Operating Temperature175 °C
Max Power Dissipation64 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for GeneSiC Semiconductor G3R350MT12J.