Diodes Inc. MMBT2222AT-7-F

Name: Diodes Inc. MMBT2222AT-7-F
Brand: Diodes Inc.
SKU: MMBT2222AT-7-F

Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount

$ 0.078

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		MMBT2222AT-7-F	3,000	3K						0.033	3d
Arrow Electronics	2	MMBT2222AT-7-F	1,212	1212						0.040
Verical	2	MMBT2222AT-7-F	12,000	3K						0.040
DigiKey	3	MMBT2222AT-FDICT-ND	662	1	Cut Tape	0.310	0.191	0.119	0.078	0.078
TME	2	MMBT2222AT-7-F	675	1		0.266	0.160	0.101	0.064	0.043	3h

Inventory History

3 month trend: -16.06%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. MMBT2222AT-7-F.

IHS

Datasheet6 pages8 years ago

Upverter

Newark

Diodes Inc SCT

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-16.06%

CAD Models

Download Diodes Inc. MMBT2222AT-7-F symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	FILES
Component Search Engine	SymbolFootprint	Download
EE Concierge	SymbolFootprint
SnapEDA	SymbolFootprint	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

Diodes Inc.MMBT2222AT-7-F

onsemiMMBT2222ALT1G

Price @ 1000

$ 0.078

$ 0.036

Stock

2,215,367

114,918,836

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-523

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

40 V

Max Collector Current

600 mA

Transition Frequency

300 MHz

Collector Emitter Saturation Voltage

300 mV

hFE Min

Power Dissipation

150 mW

225 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

Diodes Inc.MMBT4401T-7-F

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Details

Diodes Inc.MMBT3904T-7-F

Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 150 mW, SOT-523, Surface Mount

Details

Diodes Inc.DDTC114WE-7

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Details

onsemiFJY3004R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Details

onsemiFJY3014R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Details

onsemiFJY3011R

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-523F

Details

Descriptions

Descriptions of Diodes Inc. MMBT2222AT-7-F provided by its distributors.

Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount

Avnet Silica

Bipolar Transistors (BJT); MMBT2222AT-7-F; DIODES; NPN; 40 V; 600 mA; 3

Maritex

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Semicontronic

Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz; Product Range:- Rohs Compliant: No |Diodes Inc. MMBT2222AT-7-F.

Newark

TRANSISTOR, NPN, SOT523; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-523; No. of Pins:3; Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:600mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; Package / Case:SOT-523; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:Small Signal

element14 APAC