Vishay Semiconductor P6SMB51AHE3/52

Diode TVS Single Uni-Dir 43.6V 600W 2-Pin DO-214AA T/R
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSMB
Contact PlatingTin
MountSurface Mount
Technical
Breakdown Voltage48.5 V
Clamping Voltage70.1 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current1 µA
Max Surge Current100 A
Min Breakdown Voltage48.5 V
Min Operating Temperature-65 °C
Number of Channels1
Operating Supply Voltage43.6 V
Peak Pulse Current8.6 A
Peak Pulse Power 600 W
PolarityUnidirectional
Reverse Standoff Voltage43.6 V
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor P6SMB51AHE3/52.

Future Electronics
Datasheet5 pages6 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay Semiconductor P6SMB51AHE3/52.

Related Parts

Descriptions

Descriptions of Vishay Semiconductor P6SMB51AHE3/52 provided by its distributors.

Diode TVS Single Uni-Dir 43.6V 600W 2-Pin DO-214AA T/R
P6SMB Series 5 W 53.6 V Uni-Directional Surface Mount TVS Diode - SMB
TVS DIODE 43.6VWM 70.1VC DO214AA

Manufacturer Aliases

Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:

  • Vishay Semiconductor Opto Division
  • Vishay Semiconductor Diodes Division
  • Vishay Semiconductors
  • VISHAY GENERAL SEMICONDUCTOR
  • GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay General Semiconductor - Diodes Division
  • VishaySem
  • General Semiconductor / Vishay
  • VISHAY SEMI
  • VISHAYSEMICOND
  • VISHAY - GENERAL SEMI
  • VISHAY SE
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY GENERAL SEMICONDUC
  • VISHAY SEMICONDUCTOR PDD
  • GEN SEMI/VISHAY
  • Vishay General Semiconductors
  • Vishary General Semiconductor
  • VISHAY SEMICONDUCTOR ITALIANA

Technical Specifications

Physical
Case/PackageSMB
Contact PlatingTin
MountSurface Mount
Technical
Breakdown Voltage48.5 V
Clamping Voltage70.1 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current1 µA
Max Surge Current100 A
Min Breakdown Voltage48.5 V
Min Operating Temperature-65 °C
Number of Channels1
Operating Supply Voltage43.6 V
Peak Pulse Current8.6 A
Peak Pulse Power 600 W
PolarityUnidirectional
Reverse Standoff Voltage43.6 V
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor P6SMB51AHE3/52.

Future Electronics
Datasheet5 pages6 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago