onsemi P2N2222AG

NPN Bipolar Transistor, 0.6 A 40 V, 3-pin TO-92 | ON Semiconductor P2N2222AG
Obsolete

Price and Stock

Technical Specifications

Physical
Case/PackageTO-92-3
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min35
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Manufacturer Package IdentifierCASE 29 -11
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi P2N2222AG.

onsemi
Datasheet6 pages17 years ago
Farnell
Datasheet6 pages11 years ago

Alternate Parts

Price @ 1000
$ 0.08
$ 0.061
$ 0.061
Stock
39,269
1,107,711
1,107,711
Authorized Distributors
1
12
12
Mount
-
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1 V
300 mV
300 mV
hFE Min
35
100
100
Power Dissipation
625 mW
625 mW
625 mW

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi P2N2222AG.

Related Parts

Descriptions

Descriptions of onsemi P2N2222AG provided by its distributors.

NPN Bipolar Transistor, 0.6 A 40 V, 3-pin TO-92 | ON Semiconductor P2N2222AG
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Box
TRANSISTOR; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Current Ic Continuous a Max:600mA; Voltage, Vce Sat Max:1V; Power Dissipation:625mW; Min Hfe:75; ft, Typ:300MHz; Case Style:TO-92; Termination Type:Through Hole

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • P2N2222AG.

Technical Specifications

Physical
Case/PackageTO-92-3
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min35
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Manufacturer Package IdentifierCASE 29 -11
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi P2N2222AG.

onsemi
Datasheet6 pages17 years ago
Farnell
Datasheet6 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago