Nexperia NX7002AK,215

NEXPERIA - NX7002AK, 215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT
Number of Pins3
Technical
Continuous Drain Current (ID)190 mA
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)1.6 V
Input Capacitance17 pF
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Power Dissipation265 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel
Rds On Max4.5 Ω
Rise Time7 ns
Schedule B8541210080
Turn-Off Delay Time20 ns
Turn-On Delay Time6 ns

Documents

Download datasheets and manufacturer documentation for Nexperia NX7002AK,215.

TME
Datasheet16 pages8 years ago
Future Electronics
Datasheet16 pages8 years ago
Upverter
Datasheet15 pages11 years ago
NXP Semiconductors
Datasheet15 pages11 years ago

Inventory History

3 month trend:
-70.52%

Supply Chain

Lifecycle StatusProduction (Last Updated: 20 hours ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 20 hours ago)

Engineering Resources

View Evaluation kits and Reference designs for Nexperia NX7002AK,215.

Descriptions

Descriptions of Nexperia NX7002AK,215 provided by its distributors.

NEXPERIA - NX7002AK,215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
NX7002AK Series 60 V 4.5 Ohm 265 mW 0.33 nC N-Channel TrenchMOS FET - SOT-23
NX7002AK - 60 V, single N-channel Trench MOSFET
Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:265Mw Rohs Compliant: Yes |Nexperia NX7002AK,215
Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 265

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NEXP
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • Nexperi
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/PHILIPS
  • NEX-NXP

Technical Specifications

Physical
Case/PackageSOT
Number of Pins3
Technical
Continuous Drain Current (ID)190 mA
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)1.6 V
Input Capacitance17 pF
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Power Dissipation265 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel
Rds On Max4.5 Ω
Rise Time7 ns
Schedule B8541210080
Turn-Off Delay Time20 ns
Turn-On Delay Time6 ns

Documents

Download datasheets and manufacturer documentation for Nexperia NX7002AK,215.

TME
Datasheet16 pages8 years ago
Future Electronics
Datasheet16 pages8 years ago
Upverter
Datasheet15 pages11 years ago
NXP Semiconductors
Datasheet15 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago