onsemi NTR4003NT1G

Transistor: N-MOSFET; unipolar; 30V; 0.5A; 1.5ohm; 0.69W; -55+150 deg.C; SMD; SOT23; AEC-Q100
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time47.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation690 mW
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation690 mW
Rds On Max1.5 Ω
Resistance1 Ω
Rise Time47.9 ns
Schedule B8541210080
Threshold Voltage1.4 V
Turn-Off Delay Time65.1 ns
Turn-On Delay Time16.7 ns
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi NTR4003NT1G.

onsemi
Datasheet5 pages11 years ago
Upverter
Datasheet6 pages4 years ago
Technical Drawing1 page4 years ago
Future Electronics
Datasheet5 pages17 years ago
Newark
Datasheet5 pages7 years ago
RS (Formerly Allied Electronics)
Datasheet5 pages8 years ago
iiiC
Datasheet5 pages11 years ago
Farnell
Datasheet4 pages17 years ago

Inventory History

3 month trend:
-53.97%

Alternate Parts

This Part
Alternate Parts
Price @ 1000
$ 0.072
$ 0.074
Stock
9,461,707
5,963,375
Authorized Distributors
4
8
Mount
-
-
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
500 mA
500 mA
Threshold Voltage
1.4 V
800 mV
Rds On Max
1.5 Ω
1.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
690 mW
690 mW
Input Capacitance
21 pF
21 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi NTR4003NT1G.

Related Parts

Descriptions

Descriptions of onsemi NTR4003NT1G provided by its distributors.

Transistor: N-MOSFET; unipolar; 30V; 0.5A; 1.5ohm; 0.69W; -55+150 deg.C; SMD; SOT23; AEC-Q100
NTR4003NT1G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
NFET SOT23 30V .56A 1500M; Transistor Polarity:N Channel; Continuous Drain Current Id:560µA; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 560mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.4V; Voltage Vgs Rds on Measurement: 4V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • NTR4003NT1G.

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time47.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation690 mW
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation690 mW
Rds On Max1.5 Ω
Resistance1 Ω
Rise Time47.9 ns
Schedule B8541210080
Threshold Voltage1.4 V
Turn-Off Delay Time65.1 ns
Turn-On Delay Time16.7 ns
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for onsemi NTR4003NT1G.

onsemi
Datasheet5 pages11 years ago
Upverter
Datasheet6 pages4 years ago
Technical Drawing1 page4 years ago
Future Electronics
Datasheet5 pages17 years ago
Newark
Datasheet5 pages7 years ago
RS (Formerly Allied Electronics)
Datasheet5 pages8 years ago
iiiC
Datasheet5 pages11 years ago
Farnell
Datasheet4 pages17 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago