onsemi NTP2955G
Production
Technical Specifications
Physical
Case/PackageTO-220-3
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance156 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.4 W
Rds On Max196 mΩ
Resistance156 MΩ
Rise Time41 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm
Inventory History
3 month trend: -22.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi NTP2955G.
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Descriptions
Descriptions of onsemi NTP2955G provided by its distributors.
Power MOSFET -60V -12A 196 mOhm Single P-Channel TO-220
N-Channel 60 V 156 mOhm 62.5 W Flange Mount Power MOSFET - TO-220
Trans MOSFET P-CH 60V 2.4A Automotive 3-Pin(3+Tab) TO-220AB Tube
MOSFET, Power, P-Ch, VDSS -60V, RDS(ON) 156 Milliohms, ID -12A, TO-220, gFS 6S
Power MOSFET -60 V -12 A Single P-Channel TO-220AB
MOSFET, P, 60V, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.196ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Diss
-60 V, -12 A, SINGLE P-CHANNEL, TO-220 POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 60V, 0.196ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -22.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance156 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.4 W
Rds On Max196 mΩ
Resistance156 MΩ
Rise Time41 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements