NTE Electronics NTE6810

IC-NMOS Static RAM 1k 450ns 24-lead DIP

SRAM Memory IC; Memory Type:SRAM; Interface Type:Serial; Memory Size:1KB; Memory Organization:128 x 8; Access Time, Tacc:450ns; Memory Voltage, Vcc:5V; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V

The NTE6810 is a byte-orgainzed memory in a 24-Lead DIP type package designed for use in bus-organized systems. It is fabricated with N-channel silicon-gate technology. For ease of use, this device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks or refreshing because of static operation. The memory is compatible with the 6800 Microcomputer Family, providing random storage in byte increments. Memory expansion is provided through multiple Chip Select inputs.