Fairchild Semiconductor NDT2955

P-Channel 60 V 0.3 Ohm Enhancement Mode Field Effect Transistor - SOT-223

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Descriptions

MOSFET P-CH 60V 2.5A SOT-223-4
Digi-Key
P-Channel 60 V 0.3 Ohm Enhancement Mode Field Effect Transistor - SOT-223
Future Electronics
Trans MOSFET P-CH 60V 2.5A 4-Pin(3+Tab) SOT-223 T/R
Verical
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:2.5A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
Newark
Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
TME
Trans MOSFET P-CH 60V 2.5A 4-Pin(3+Tab) SOT-223 T/R
Chip One Stop Japan
P CH MOSFET, -60V, 2.5A, SOT-223;
Component Sense
MOSFET, P CH, 60V, 2.5A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:2.6V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:15A; SMD Marking:2955; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-2.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-4V
element14 APAC
Trans MOSFET P-CH 60V 2.5A 4-Pin(3+Tab) SOT-223 T/R
Avnet Asia
Trans MOSFET P-CH 60V 2.5A 4-Pin(3+Tab) SOT-223 T/R
Avnet
MOSFET P-Channel 60V 2.5A SOT223
RS Components
MOSFET, P, SOT-223; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:60V; Current, Id Cont:2.5A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.6V; Case Style:SOT-223; Termination Type:SMD; Current, Idm Pulse:15A; External Depth:7.3mm; External Length / Height:1.7mm; Power Dissipation:3W; Power, Pd:3W; SMD Marking:2955; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-4V; Width, External:6.7mm; Width, Tape:12mm
Farnell
MOSFETs SOT-223 P-CH ENHANCE
Mouser
This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.
Fairchild Semiconductor

Technical Specifications

Polarity P-Channel
Current Rating -2.5 A
Continuous Drain Current (Ids) 2.5 A
Number of Pins 4
Mounting Type Surface Mount
Lead-Free Status Lead Free
Drain to Source Resistance (on) (Rds) 300 mΩ
Breakdown Voltage [Gate to Source] -20 V (min) - 20 V (max)
Drain to Source Voltage (Vds) -60 V
Packaging Cut Tape (CT) Tape & Reel (TR)
Power Dissipation 3 W
Voltage Rating (DC) -60 V
Breakdown Voltage (Drain to Source) -60 V
REACH SVHC Compliance No SVHC
Case / Package / Footprint SOT-223
Lifecycle Status Active
RoHS Compliant

Documents

Digi-Key
Datasheet 5 pages 14 years ago
Fairchild Semiconductor
Technical Drawing 1 page 8 years ago
element14 APAC
Datasheet
Datasheet
Datasheet
Farnell
Datasheet 8 pages 7 years ago
TME
Datasheet
Jameco
Datasheet 6 pages 10 years ago
iiiC
Datasheet 5 pages 14 years ago
Onlinecomponents.com
Datasheet 5 pages 4 years ago
Compliance Statements
Materials Sheet 3 pages 2 years ago
Reach Statement 2 pages 3 years ago
Rohs Statement 1 page 3 years ago
Rohs Statement 1 page 4 years ago
Reach Statement 3 pages 2 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago

Images

Alternate Names

FAIRCHILD NDT2955
FSC NDT2955
FAIR NDT2955
QTC NDT2955
FAI NDT2955
FAIRCHIL NDT2955
FAIRCHILD SEMI NDT2955
FCS NDT2955
QT OPTO NDT2955
FAIRCH NDT2955
SPT NDT2955
FAIRCHILD SEMICONDUCTOR CORP NDT2955
FAIRCHI NDT2955
FAIRC NDT2955
FARICHILD NDT2955
FAIRCHLD NDT2955
FCH NDT2955
FARA NDT2955
FDS NDT2955
FAIRCHILD SEMICONDUC NDT2955
NSC/FSC NDT2955
SIGNAL PROCESSING TECHNOLOGIES NDT2955
FAIRCHILD SEMIC NDT2955
OTHER NDT2955
FAIRCHICD NDT2955

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