onsemi NDS355AN
Production
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance195 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time32 ns
Schedule B8541210080
TerminationSMD/SMT
Turn-Off Delay Time13 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm
Inventory History
3 month trend: -49.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi NDS355AN.
Farnell
Fairchild Semiconductor
iiiC
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi NDS355AN.
Related Parts
onsemiFDN357N
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
onsemiFDN360P
Transistor: P-MOSFET; unipolar; -30V; -2A; 0.08ohm; 0.5W; -55+150 deg.C; SMD; SOT23
onsemiFDN361BN
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 1.4A, 110mΩ
Descriptions
Descriptions of onsemi NDS355AN provided by its distributors.
Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -49.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance195 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time32 ns
Schedule B8541210080
TerminationSMD/SMT
Turn-Off Delay Time13 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm
Documents
Download datasheets and manufacturer documentation for onsemi NDS355AN.
Farnell
Fairchild Semiconductor
iiiC
Newark
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements