onsemi NDC7003P

Transistor MOSFET Array Dual P-CH 60V 0.34A 6-Pin TSOT-23 T/R - Tape and Reel
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)-340 mA
Current Rating-220 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance66 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.9 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage-1.9 V
Turn-Off Delay Time8 ns
Turn-On Delay Time3.2 ns
Voltage Rating (DC)-50 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi NDC7003P.

Fairchild Semiconductor
Datasheet5 pages21 years ago
Technical Drawing1 page15 years ago
Upverter
Datasheet5 pages21 years ago
Technical Drawing1 page6 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages21 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+94.39%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi NDC7003P.

Related Parts

Descriptions

Descriptions of onsemi NDC7003P provided by its distributors.

Transistor MOSFET Array Dual P-CH 60V 0.34A 6-Pin TSOT-23 T/R - Tape and Reel
Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω
Transistor MOSFET P-Channel 60 Volt 0.34A 6-Pin SuperSOT
Dual P-Channel 60 V 5 Ohm SMT PowerTrench Mosfet - SSOT-6
DUAL P CH MOSFET, -60V, SUPER SOT-6; Tra; DUAL P CH MOSFET, -60V, SUPER SOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-340mA; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:1.2ohm; Rds(on) Test Voltage Vgs:-10V
These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • NDC7003P.

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)-340 mA
Current Rating-220 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance66 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.9 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage-1.9 V
Turn-Off Delay Time8 ns
Turn-On Delay Time3.2 ns
Voltage Rating (DC)-50 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi NDC7003P.

Fairchild Semiconductor
Datasheet5 pages21 years ago
Technical Drawing1 page15 years ago
Upverter
Datasheet5 pages21 years ago
Technical Drawing1 page6 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages21 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago