NXP Semiconductors MW6S004NT1

RF Power Transistor, 1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight280.00824 mg
Technical
Current Rating50 mA
Drain to Source Voltage (Vdss)68 V
Frequency1.96 GHz
Gain18 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency2 GHz
Max Operating Temperature150 °C
Max Output Power4 W
Min Operating Temperature-65 °C
Number of Elements1
Output Power4 W
PackagingTape and Reel
Power Gain19 dB
Schedule B8541290080
Test Current50 mA
Test Voltage28 V
Voltage Rating68 V
Voltage Rating (DC)28 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MW6S004NT1.

NXP Semiconductors SCT
Datasheet13 pages14 years ago
Freescale Semiconductor
Datasheet13 pages14 years ago
Technical Drawing3 pages10 years ago
Newark
Datasheet13 pages17 years ago

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors MW6S004NT1.

Related Parts

Descriptions

Descriptions of NXP Semiconductors MW6S004NT1 provided by its distributors.

RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811
TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pin
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight280.00824 mg
Technical
Current Rating50 mA
Drain to Source Voltage (Vdss)68 V
Frequency1.96 GHz
Gain18 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency2 GHz
Max Operating Temperature150 °C
Max Output Power4 W
Min Operating Temperature-65 °C
Number of Elements1
Output Power4 W
PackagingTape and Reel
Power Gain19 dB
Schedule B8541290080
Test Current50 mA
Test Voltage28 V
Voltage Rating68 V
Voltage Rating (DC)28 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MW6S004NT1.

NXP Semiconductors SCT
Datasheet13 pages14 years ago
Freescale Semiconductor
Datasheet13 pages14 years ago
Technical Drawing3 pages10 years ago
Newark
Datasheet13 pages17 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Materials Sheet5 pages9 years ago
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago
Conflict Mineral Statement1 page10 years ago
Rohs Statement1 page12 years ago
Reach Statement2 pages8 years ago