NXP Semiconductors MRFE6VP61K25HR6

RF Power Transistor, 1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

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Technical Specifications

Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP61K25HR6.

Future Electronics
Datasheet23 pages10 years ago
Freescale Semiconductor
Datasheet23 pages11 years ago
Datasheet13 pages13 years ago
Technical Drawing2 pages11 years ago
Farnell
Datasheet5 pages9 years ago

Inventory History

3 month trend:
-31.09%

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP61K25HR6.

Related Parts

Descriptions

Descriptions of NXP Semiconductors MRFE6VP61K25HR6 provided by its distributors.

RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Technical Specifications

Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VP61K25HR6.

Future Electronics
Datasheet23 pages10 years ago
Freescale Semiconductor
Datasheet23 pages11 years ago
Datasheet13 pages13 years ago
Technical Drawing2 pages11 years ago
Farnell
Datasheet5 pages9 years ago

Compliance

Environmental Classification
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Materials Sheet5 pages9 years ago
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago
Conflict Mineral Statement1 page10 years ago
Rohs Statement1 page12 years ago
Reach Statement2 pages8 years ago