NXP Semiconductors MRF1513NT1
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 644080-MRF1513NT1 | 153 | 4 | 3d | |||||||||
| MRF1513NT1 | 134,205 | 7 | Tape & Reel | 17h | ||||||||
| MRF1513NT1 | 6,755 | 2d | ||||||||||
| MRF1513NT1 | 969 | 10 | 22h | |||||||||
| MRF1513NT1 | 10,856 | 22h |
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight280.00824 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Voltage (Vdss)40 V
Frequency520 MHz
Gain15 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency520 MHz
Max Operating Temperature150 °C
Max Output Power3 W
Max Power Dissipation31.25 W
Min Breakdown Voltage12.5 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power3 W
PackagingCut Tape
Power Dissipation31.25 W
Schedule B8541290080
Test Current50 mA
Test Voltage12.5 V
Voltage Rating40 V
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF1513NT1.
NXP Semiconductors SCT
Factory Futures
iiiC
Jameco
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRF1513NT1.
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Descriptions
Descriptions of NXP Semiconductors MRF1513NT1 provided by its distributors.
Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V
RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight280.00824 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Voltage (Vdss)40 V
Frequency520 MHz
Gain15 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency520 MHz
Max Operating Temperature150 °C
Max Output Power3 W
Max Power Dissipation31.25 W
Min Breakdown Voltage12.5 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power3 W
PackagingCut Tape
Power Dissipation31.25 W
Schedule B8541290080
Test Current50 mA
Test Voltage12.5 V
Voltage Rating40 V
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF1513NT1.
NXP Semiconductors SCT
Factory Futures
iiiC
Jameco