Diodes Inc. MMDT5401-7-F
Technical Specifications
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)-160 V
Collector Emitter Breakdown Voltage-150 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)-150 V
Continuous Collector Current-200 mA
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min50
Max Breakdown Voltage150 V
Max Collector Current-200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)-150 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Inventory History
3 month trend: -59.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. MMDT5401-7-F.
Related Parts
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Descriptions
Descriptions of Diodes Inc. MMDT5401-7-F provided by its distributors.
Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 2-Element, PNP, Silicon
MMDT5401 Series 150 V 200 mA 200 mW Dual PNP Small Signal Transistor - SOT-363
Trans GP BJT PNP 150V 0.2A 6Pin SOT363 | Diodes Inc MMDT5401-7-F
Trans GP BJT PNP 150V 0.2A 320mW 6-Pin SOT-363 T/R
TRANSISTOR, PNP/PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Power Dissipation Pd:200mW; DC Collector Current:-200mA; DC Current Gain hFE:60; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:-200mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -59.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)-160 V
Collector Emitter Breakdown Voltage-150 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)-150 V
Continuous Collector Current-200 mA
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min50
Max Breakdown Voltage150 V
Max Collector Current-200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingCut Tape
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)-150 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements