onsemi MMBTH10LT1G
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 7387848 | 9,000 | 3K | Tape & Reel | 1d | ||||||||
| MMBTH10LT1G | 1,020,719 | 20h | ||||||||||
| MMBTH10LT1G | 30,000 | >1wk | ||||||||||
| MMBTH10LT1G | 30,000 | 29412 | 2d | |||||||||
| MMBTH10LT1G | 24,493 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)25 V
Current Rating4 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency650 MHz
Gain Bandwidth Product650 MHz
hFE Min60
Max Breakdown Voltage25 V
Max Collector Current100 nA
Max Frequency650 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation225 mW
TerminationSMD/SMT
Transition Frequency650 MHz
Voltage Rating (DC)25 V
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm
Inventory History
3 month trend: +0.94%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.045
$ 0.052
Stock
4,443,584
1,295,821
Authorized Distributors
13
11
Mount
-
Surface Mount
Case/Package
SOT-23-3
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
25 V
25 V
Max Collector Current
100 nA
50 mA
Transition Frequency
650 MHz
650 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
60
60
Power Dissipation
225 mW
300 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBTH10LT1G.
Related Parts
onsemiMMBTH10-4LT1G
NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz
onsemiMMBT5089LT1G
Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 300mW Surface Mount SOT-23-3 (TO-236)
onsemiMMBT6521LT1G
MMBT6521 Series 25 V 100 mA SMT NPN Amplifier Transistor - SOT-23-3
Descriptions
Descriptions of onsemi MMBTH10LT1G provided by its distributors.
TRANS SS VHF MIXER NPN 25V SOT23 / Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23
25V 225mW 60@4mA,10V NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz
ON Semi MMBTH10LT1G NPN RF Bipolar Transistor, 0.004 A, 25 V, 3-Pin SOT-23 | ON Semiconductor MMBTH10LT1G
NPN-RF 25V 50mA 225mW 650MHz SOT23
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
Bipolar Transistor, Npn, 25V; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:650Mhz; Power Dissipation:225Mw; Continuous Collector Current:4Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.94%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)25 V
Current Rating4 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency650 MHz
Gain Bandwidth Product650 MHz
hFE Min60
Max Breakdown Voltage25 V
Max Collector Current100 nA
Max Frequency650 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation225 mW
TerminationSMD/SMT
Transition Frequency650 MHz
Voltage Rating (DC)25 V
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements