onsemi MMBTA06

80V 300mW 100@10mA, 1V 0.5A NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current500 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.2 mm
Length6.35 mm
Width6.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi MMBTA06.

Fairchild Semiconductor
Datasheet15 pages23 years ago
Technical Drawing1 page12 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
Farnell
Datasheet5 pages13 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Jameco
Datasheet16 pages15 years ago
iiiC
Datasheet6 pages0 years ago
Newark
Datasheet0 pages0 years ago

Alternate Parts

Price @ 1000
$ 0.037
$ 0.043
$ 0.08
$ 0.026
$ 0.112
$ 0.06
$ 0.02
$ 0.098
$ 0.075
$ 0.112
Stock
388,112
15,312,265
18,469,095
9,919,380
10,534,886
841,373
846,198
10,448,358
5,474,130
2,061,983
413,429
Authorized Distributors
0
10
11
12
8
10
8
14
8
7
12
Mount
Surface Mount
-
Surface Mount
-
-
Surface Mount
Surface Mount
-
Surface Mount
-
Surface Mount
Case/Package
SOT-23
SOT-23-3
SOT-23
SOT-23-3
SOT-23-3
SMD/SMT
SOT-23
-
SOT-323
SOT-23-3
SMD/SMT
Polarity
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
80 V
80 V
80 V
80 V
-
80 V
80 V
80 V
Max Collector Current
500 mA
500 mA
500 mA
500 mA
500 mA
500 mA
500 mA
-
500 mA
500 mA
500 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
100 MHz
100 MHz
120 MHz
100 MHz
-
100 MHz
100 MHz
120 MHz
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
250 mV
250 mV
500 mV
250 mV
-
250 mV
250 mV
-
hFE Min
100
100
100
-
100
120
100
-
100
-
120
Power Dissipation
350 mW
300 mW
310 mW
300 mW
300 mW
200 mW
330 mW
-
200 mW
300 mW
200 mW

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi MMBTA06.

Related Parts

Descriptions

Descriptions of onsemi MMBTA06 provided by its distributors.

80V 300mW 100@10mA,1V 0.5A NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):100; Package/Case:SOT-323; C-E Breakdown Voltage:80V; DC Collector Current:0.5A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • MMBTA-06
  • MMBTA06.

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current500 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.2 mm
Length6.35 mm
Width6.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi MMBTA06.

Fairchild Semiconductor
Datasheet15 pages23 years ago
Technical Drawing1 page12 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
Farnell
Datasheet5 pages13 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Jameco
Datasheet16 pages15 years ago
iiiC
Datasheet6 pages0 years ago
Newark
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago