onsemi MMBT5551
Obsolete
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min80
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Inventory History
3 month trend: -19.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi MMBT5551.
onsemi
Fairchild Semiconductor
iiiC
Jameco
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.031
$ 0.035
Stock
5,358,920
22,812,846
Authorized Distributors
2
9
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
Max Collector Current
600 mA
600 mA
Transition Frequency
100 MHz
-
Collector Emitter Saturation Voltage
200 mV
150 mV
hFE Min
80
80
Power Dissipation
350 mW
225 mW
Supply Chain
Lifecycle StatusObsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBT5551.
Related Parts
onsemi KST5551MTF
KST Series NPN 350 mW 160 V 600 mA Surface Mount Epitaxial Transistor - SOT-23
Diodes Inc. MMBT5551-7-F
MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
onsemi MMBT5550
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 600mA 350mW 50MHz
Descriptions
Descriptions of onsemi MMBT5551 provided by its distributors.
600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number
Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 600mA 350mW 300MHz
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
Bipolar Transistors - BJT SOT-23 NPN GEN PUR
NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -19.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min80
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Documents
Download datasheets and manufacturer documentation for onsemi MMBT5551.
onsemi
Fairchild Semiconductor
iiiC
Jameco
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements