Diodes Inc. MMBT5551-7-F

MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Continuous Collector Current200 mA
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation300 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)160 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. MMBT5551-7-F.

element14 APAC
Datasheet4 pages15 years ago
Diodes Inc SCT
Datasheet6 pages9 years ago
Technical Drawing5 pages7 years ago
Future Electronics
Datasheet5 pages1 year ago
Datasheet6 pages11 years ago
iiiC
Datasheet4 pages15 years ago
DigiKey
Datasheet4 pages18 years ago

Inventory History

3 month trend:
-2.09%

Alternate Parts

Price @ 1000
$ 0.027
$ 0.035
$ 0.035
Stock
4,074,343
23,699,746
23,699,746
Authorized Distributors
12
9
9
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
160 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
-
-
Collector Emitter Saturation Voltage
200 mV
150 mV
150 mV
hFE Min
30
80
80
Power Dissipation
300 mW
225 mW
225 mW

Engineering Resources

View Evaluation kits and Reference designs for Diodes Inc. MMBT5551-7-F.

Related Parts

Descriptions

Descriptions of Diodes Inc. MMBT5551-7-F provided by its distributors.

MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
TRANS NPN 160V 0.6A SOT23-3 / Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
160V 300mW 80@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 160V 0.6A 3Pin SOT23 | Diodes Inc MMBT5551-7-F
Transistor,NPN,160V,0.6A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation
TRANSISTOR,NPN,160V,0.6A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 300MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH

Part Number Aliases

This part may be known by these alternate part numbers:

  • MMBT 5551-7-F
  • MMBT5551-7-F.

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Continuous Collector Current200 mA
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation300 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)160 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. MMBT5551-7-F.

element14 APAC
Datasheet4 pages15 years ago
Diodes Inc SCT
Datasheet6 pages9 years ago
Technical Drawing5 pages7 years ago
Future Electronics
Datasheet5 pages1 year ago
Datasheet6 pages11 years ago
iiiC
Datasheet4 pages15 years ago
DigiKey
Datasheet4 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement127 pages10 years ago