onsemi MMBT5401
Obsolete
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight59.987591 mg
Technical
Collector Base Voltage (VCBO)-160 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)-150 V
Current2 A
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min60
Max Breakdown Voltage150 V
Max Collector Current-600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Transition Frequency300 MHz
Voltage150 V
Voltage Rating (DC)-150 V
Dimensions
Height960 µm
Length2.9 mm
Width1.3 mm
Inventory History
3 month trend: -3.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi MMBT5401.
Farnell
Upverter
Fairchild Semiconductor
iiiC
Jameco
TME
element14 APAC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.029
$ 0.036
Stock
3,042,111
8,140,383
Authorized Distributors
2
10
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23-3
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
150 V
-150 V
Max Collector Current
-600 mA
500 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
-500 mV
-500 mV
hFE Min
60
50
Power Dissipation
350 mW
300 mW
Supply Chain
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBT5401.
Related Parts
Diodes Inc. MMBT5401-7-F
MMBT5401 Series PNP -150 V 300 mW Small Signal Transistor Surface Mount-SOT-23-3
onsemi KST5401MTF
TRANSISTOR,BJT,PNP,150V V(BR)CEO,500MA I(C),SOT-23
Diodes Inc. MMBT2907A-7-F
MMBT2907A Series PNP 60 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Descriptions
Descriptions of onsemi MMBT5401 provided by its distributors.
Transistor General Purpose BJT PNP 150 Volt 0.6A 3-Pin SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 150V 0.6A 3-Pin SOT-23 T/R - Tape and Reel
TRANSISTOR,PNP,SMD,SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Coll; Available until stocks are exhausted Alternative available
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):50; Package/Case:SOT-323; C-E Breakdown Voltage:150V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -3.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight59.987591 mg
Technical
Collector Base Voltage (VCBO)-160 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)-150 V
Current2 A
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min60
Max Breakdown Voltage150 V
Max Collector Current-600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Transition Frequency300 MHz
Voltage150 V
Voltage Rating (DC)-150 V
Dimensions
Height960 µm
Length2.9 mm
Width1.3 mm
Documents
Download datasheets and manufacturer documentation for onsemi MMBT5401.
Farnell
Upverter
Fairchild Semiconductor
iiiC
Jameco
TME
element14 APAC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements