onsemi MMBT3904
Obsolete
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi MMBT3904.
element14 APAC
Farnell
Newark
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.022
$ 0.031
Stock
6,111,461
60,145,991
Authorized Distributors
1
12
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
hFE Min
100
100
Power Dissipation
350 mW
225 mW
Supply Chain
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBT3904.
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Descriptions
Descriptions of onsemi MMBT3904 provided by its distributors.
MMBT3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - SOT-23
NPN GENERAL-PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
NPNBipolar (BJT) Transistor MMBT3904 SOT-23(ON)
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Case
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; Package/Case:SOT-23; C-E Breakdown Voltage:40V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:5dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1A; Termination Type:SMD; Voltage Vcbo:60V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Documents
Download datasheets and manufacturer documentation for onsemi MMBT3904.
element14 APAC
Farnell
Newark
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements