ON Semiconductor
MMBT3904

Trans Gp Bjt NPN 40V 0.2A 3-PIN SOT-23 T/r Trans Gp Bjt NPN 40V 0.2A 3-PIN SOT-23 T/r

Datasheet

Price & Stock

ON Semiconductor MMBT3904 pricing and available inventory.

Authorized Distributors

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SellerSKUUpdated
98467272,182
USD *
0.1850.0640.0300.030
14h
MMBT39041USD0.0150.0150.0150.0150.015
13h
984672772,000
USD *
0.1050.0670.0440.0290.029
15h
58K94310
··
USD
1d

Non-Authorized Stocking Distributors

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SellerSKUUpdated
235298-MMBT39041,221,364USD0.011
5d
MMBT39042,585,522USD0.015
>1wk
MMBT3904-FAIRCHILD SEMICONDUCTOR4,640USD0.014
>1wk
MMBT39043,457USD0.015
7h
MMBT3904135,882
2d
MMBT390478,723
6d
MMBT3904677USD0.0790.0790.0790.0790.055
11h
MMBT39043,879
>1wk
MMBT390486,054
2d
MMBT39043,219
10h
MMBT39042,585,523
>1wk
MMBT39041,490
>1wk
ST218334377,523USD1.2300.7200.1800.1300.110
11h
MMBT390440
>1wk
1264825Yes
USD *
0.4000.4000.4000.4000.400
1d
8682743312,429
3d
MMBT390470USD0.1540.1540.1540.1540.154
>1wk
MMBT3904297
7d
MMBT390426
3d
MMBT39042,980
14h
MMBT39043,000
>1wk
MMBT39041,162
>1wk
MMBT390477
11h
MMBT3904-11906-FAIRCHILD SEMICONDUCTOR3,113
>1wk

Non-Authorized Dealers

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SellerSKUUpdated
MMBT3904Contact
··
>1wk
MMBT3904Contact
>1wk
MMBT3904Contact
··
>1wk
MMBT3904Contact
>1wk
NS-MMBT3904Contact
··
>1wk
MMBT3904Contact
··
>1wk

Technical Specifications

ON Semiconductor MMBT3904 technical specifications, attributes, and parameters.

Supply Chain
Lifecycle StatusEOL (Last Updated: 7 months ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Compliance
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant

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Power Dissipation
310 mW
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Price @ 1,000
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Authorized Distributors
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Mount
Surface Mount
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Collector Emitter Breakdown Voltage
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Max Collector Current
600 mA
Transition Frequency
250 MHz
Collector Emitter Saturation Voltage
750 mV
hFE Min
40
Power Dissipation
310 mW

Documents

Download datasheets and manufacturer documentation for ON Semiconductor MMBT3904.

Upverter
Datasheet7 pages9 years ago
Datasheet
Datasheet
Fairchild Semiconductor
Datasheet7 pages20 years ago
Technical Drawing1 page9 years ago
ON Semiconductor
Datasheet
Datasheet
element14 APAC
Datasheet
Datasheet14 pages8 years ago
Datasheet
Datasheet
Farnell
Datasheet8 pages11 years ago
Newark
Datasheet
TME
Datasheet
Compliance Statements
Rohs Statement3 pages8 days ago
Rohs Statement3 pages7 years ago
Reach Statement3 pages7 years ago
Rohs Statement3 pages6 years ago
Materials Sheet3 pages6 years ago
Reach Statement3 pages6 years ago
Materials Sheet3 pages6 years ago
Reach Statement8 pages6 years ago
Reach Statement2 pages8 years ago
Rohs Statement1 page8 years ago
Rohs Statement1 page7 years ago
Rohs Statement
Rohs Statement

Descriptions

Descriptions of ON Semiconductor MMBT3904 provided by its distributors.

Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
MMBT3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - SOT-23
NPNBipolar (BJT) Transistor MMBT3904 SOT-23(ON)
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; Package/Case:SOT-23; C-E Breakdown Voltage:40V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:5dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1A; Termination Type:SMD; Voltage Vcbo:60V

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