N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
TRANSISTOR, JFET, N, SMD, SOT-323; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:50mA to 150mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:150mA; Current Idss Min:50mA; Package / Case:SOT-323; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Transistor Polarity:N Channel