onsemi MMBF170
Production
In StockTechnical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation300 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm
Inventory History
3 month trend: -19.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi MMBF170.
Farnell
onsemi
element14 APAC
iiiC
Jameco
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.059
$ 0.033
Stock
3,582,546
15,676,255
Authorized Distributors
11
13
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
500 mA
500 mA
Threshold Voltage
2.1 V
2.1 V
Rds On Max
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 mW
300 mW
Input Capacitance
40 pF
40 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MMBF170.
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N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω
Descriptions
Descriptions of onsemi MMBF170 provided by its distributors.
Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
FAIRCHILD MMBF170 / MOSFET N-CH 60V 500MA SOT-23FAIRCHI
Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 300
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -19.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation300 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm
Documents
Download datasheets and manufacturer documentation for onsemi MMBF170.
Farnell
onsemi
element14 APAC
iiiC
Jameco
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements