onsemi MJE4343G
Production
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage3.5 V
Collector Emitter Voltage (VCEO)160 V
Current Rating16 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency1 MHz
Gain Bandwidth Product1 MHz
hFE Min15
Max Collector Current16 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation125 W
Schedule B8541290080
Transition Frequency1 MHz
Voltage Rating (DC)160 V
Dimensions
Height16.2 mm
Length15.2 mm
Width4.9 mm
Inventory History
3 month trend: +1.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MJE4343G.
Related Parts
onsemi MJW21192
Tube Through Hole NPN Single Bipolar (BJT) Transistor 15 @ 4A 2V 8A 125W 4MHz
onsemi MJH11022G
15 A, 250 V NPN Darlington Bipolar Power Transistor
onsemi MJH11020G
20 A, 200 V NPN Darlington Bipolar Power Transistor
Descriptions
Descriptions of onsemi MJE4343G provided by its distributors.
ON Semi MJE4343G NPN Bipolar Transistor, 16 A, 160 V, 3-Pin SOT-93 | ON Semiconductor MJE4343G
16 A, 160 V NPN Bipolar Power Transistor
Trans GP BJT NPN 160V 16A 125000mW 3-Pin(3+Tab) TO-247 Tube
MJE Series 160 V 16 A Flange Mount NPN High Power Transistor SOT-93
TRANSISTOR, RF BIPOLAR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 1MHz; Power Dissipation Pd: 125W; DC Collector Current: 16A; DC Current Gain hFE: 35hFE; Transistor Case Style: TO-218; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic: 16A; Gain Bandwidth ft Typ: 1MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; RF Transistor Case: TO-218; Termination Type: Through Hole
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +1.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage3.5 V
Collector Emitter Voltage (VCEO)160 V
Current Rating16 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency1 MHz
Gain Bandwidth Product1 MHz
hFE Min15
Max Collector Current16 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation125 W
Schedule B8541290080
Transition Frequency1 MHz
Voltage Rating (DC)160 V
Dimensions
Height16.2 mm
Length15.2 mm
Width4.9 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements