onsemi MJD45H11T4G

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency90 MHz
Gain Bandwidth Product90 MHz
hFE Min60
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Frequency90 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.75 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency90 MHz
Voltage Rating (DC)-80 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi MJD45H11T4G.

Upverter
Datasheet8 pages13 years ago
Datasheet8 pages13 years ago
Datasheet8 pages16 years ago
Datasheet9 pages11 years ago
Newark
Datasheet9 pages7 years ago
Datasheet8 pages8 years ago
Farnell
Datasheet8 pages10 years ago
TME
Datasheet11 pages2 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages12 years ago

Inventory History

3 month trend:
-99.89%

Alternate Parts

Price @ 1000
$ 0.31
$ 0.576
$ 0.576
Stock
1,566,568
703,578
703,578
Authorized Distributors
5
10
10
Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
90 MHz
90 MHz
90 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
60
60
60
Power Dissipation
1.75 W
1.75 W
1.75 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi MJD45H11T4G.

Related Parts

Descriptions

Descriptions of onsemi MJD45H11T4G provided by its distributors.

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD45H11T4G PNP Bipolar Transistor; 8 A; 80 V; 3-Pin DPAK
8 A, 80 V PNP Power Bipolar Junction Transistor
MJD45H11 Series 80 V 8 A PNP Complementary Power Transistor - DPAK-3
80V 1.75W 40@4A,1V 8A PNP TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 80V 8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:90Mhz; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes |Onsemi MJD45H11T4G.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • MJD45H11-T4G
  • MJD45H11T4G.

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency90 MHz
Gain Bandwidth Product90 MHz
hFE Min60
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Frequency90 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.75 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency90 MHz
Voltage Rating (DC)-80 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi MJD45H11T4G.

Upverter
Datasheet8 pages13 years ago
Datasheet8 pages13 years ago
Datasheet8 pages16 years ago
Datasheet9 pages11 years ago
Newark
Datasheet9 pages7 years ago
Datasheet8 pages8 years ago
Farnell
Datasheet8 pages10 years ago
TME
Datasheet11 pages2 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages12 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago