STMicroelectronics MJD44H11T4

Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min60
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation20 W
Schedule B8541290080
TerminationSMD/SMT
Voltage Rating (DC)80 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics MJD44H11T4.

Components Direct
Datasheet11 pages12 years ago
Farnell
Datasheet11 pages12 years ago
Factory Futures
Datasheet8 pages18 years ago
Newark
Datasheet5 pages20 years ago
TME
Datasheet11 pages12 years ago
Future Electronics
Datasheet8 pages18 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages20 years ago

Inventory History

3 month trend:
-4.35%

Alternate Parts

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Stock
1,832,753
3,040,483
681,416
616,657
1,340,833
448,291
2,129,353
3,295,338
50,473
Authorized Distributors
8
6
9
9
8
9
6
4
4
Mount
Surface Mount
-
-
-
-
Surface Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
TO-252-3
-
DPAK
Polarity
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
80 V
80 V
80 V
80 V
-
80 V
Max Collector Current
8 A
8 A
8 A
8 A
8 A
8 A
8 A
-
8 A
Transition Frequency
-
85 MHz
85 MHz
85 MHz
85 MHz
-
85 MHz
-
85 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
1 V
1 V
-
1 V
-
1 V
hFE Min
60
60
60
60
60
-
60
-
-
Power Dissipation
20 W
1.75 W
1.75 W
1.75 W
1.75 W
20 W
1.75 W
-
1.75 W

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics MJD44H11T4.

Related Parts

Descriptions

Descriptions of STMicroelectronics MJD44H11T4 provided by its distributors.

Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3
80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Bipolar Transistors - BJT NPN Gen Pur Switch
Transistor NPN 80V 8A DPAK; Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC
Trans, Npn, 80V, 8A, 150Deg C, 20W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4
Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel
TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 8A; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min60
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation20 W
Schedule B8541290080
TerminationSMD/SMT
Voltage Rating (DC)80 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics MJD44H11T4.

Components Direct
Datasheet11 pages12 years ago
Farnell
Datasheet11 pages12 years ago
Factory Futures
Datasheet8 pages18 years ago
Newark
Datasheet5 pages20 years ago
TME
Datasheet11 pages12 years ago
Future Electronics
Datasheet8 pages18 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages20 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant