onsemi MJD112-1G
Production
Technical Specifications
Physical
Case/PackageTO-251
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency25 MHz
Voltage Rating (DC)100 V
Dimensions
Height6.22 mm
Length6.73 mm
Width2.38 mm
Inventory History
3 month trend: -5.63%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.428
$ 0.155
Stock
907,022
8,260
Authorized Distributors
7
1
Mount
-
-
Case/Package
TO-251
TO-251
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
2 A
2 A
Transition Frequency
25 MHz
25 MHz
Collector Emitter Saturation Voltage
2 V
2 V
hFE Min
-
-
Power Dissipation
1.75 W
20 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MJD112-1G.
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Descriptions
Descriptions of onsemi MJD112-1G provided by its distributors.
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
ON Semi MJD112-1G NPN Darlington Transistor; 2 A 100 V HFE:1000; 3-Pin IPAK
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto
DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -5.63%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-251
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency25 MHz
Voltage Rating (DC)100 V
Dimensions
Height6.22 mm
Length6.73 mm
Width2.38 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements