공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-03-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2025-04-01
LTD Date2025-10-01
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
InfineonIPW90R500C3FKSA1
MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
STMicroelectronicsSTW15N80K5
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-247 package
STMicroelectronicsSTW11NK90Z
Power MOSFET, N Channel, 900 V, 9.2 A, 980 Milliohms, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 Wolfspeed C3M0280090D에 대한 설명입니다.
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode
Wolfspeed
SICFET N-CH 900V 11.5A TO247-3 / N-Channel 900 V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3
Power Field-Effect Transistor, 10.2A I(D), 900V, 0.36ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
MOSFET, N-CH, 900V, 11.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.28oh; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; No. Of Pins:3Pins; Rds(On) Test Voltage:15V; Power Dissipation:54W Rohs Compliant: Yes |WOLFSPEED C3M0280090D
제조업체 별칭
Wolfspeed에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Wolfspeed는 다음 이름으로도 알려져 있습니다:
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10.2 A
Current Rating11.5 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)900 V
Gate to Source Voltage (Vgs)19 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation45 W
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time8.5 ns
Turn-On Delay Time5.3 ns
Dimensions
Height25.5 mm