공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
VishayVS-FA40SA50LC
543W(Tc) 20V 4V@ 250¦ÌA 420nC@ 10 V 1N 500V 130m¦¸@ 23A,10V 40A 6.9nF@25V SOT-227
설명
유통업체에서 제공한 Vishay VS-FB190SA10에 대한 설명입니다.
N-CHANNEL MOSFET TRANSISTOR 190 A 100 V 4-PIN SOT-227
Trans MOSFET N-CH 100V 190A 4-Pin SOT-227
Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227
N-Ch 100V 190A 568W 0,0065R SOT227
Power Field-Effect Transistor, 190A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CH 100V 190A 6,5mOhm SOT-227
Output & SW Modules - ECONO IGBT-e3
MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOT-227
MountChassis Mount, Screw, Surface Mount
Number of Pins4
Number of Terminals4
Weight30.000004 g
Technical
Continuous Drain Current (ID)190 A
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time335 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.7 nF
Max Operating Temperature150 °C
Max Power Dissipation568 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3.3 V
Number of Channels1
Number of Elements1
Power Dissipation568 W
Rds On Max6.5 mΩ
Rise Time351 ns
Schedule B8541290080
Threshold Voltage3.3 V
Turn-Off Delay Time181 ns
Turn-On Delay Time45 ns
Dimensions
Height12.3 mm
Length38.3 mm
Width25.7 mm