공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-26
LTD Date2019-08-26
관련 부품
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRF3709PBF
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB
설명
유통업체에서 제공한 Vishay SUP85N03-3M6P-GE3에 대한 설명입니다.
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
MOSFET N-CH 30V 85A TO220AB
Power Field-Effect Transistor, 85A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL 30-V (D-S) MOSFET
MOSFET,N CH,W DIODE,30V,85A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)85 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.535 nF
Max Operating Temperature150 °C
Max Power Dissipation78.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.1 W
Rds On Max3.6 mΩ
Rise Time10 ns
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time11 ns