공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-19
LTD Date2012-07-19
관련 부품
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
InfineonIRFS7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
onsemiBBS3002-TL-1E
MOSFET P-CH 60V 100A D2PAK / P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount D2PAK (TO-263)
설명
유통업체에서 제공한 Vishay SUM90N06-5M5P-E3에 대한 설명입니다.
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263
MOSFET, N CH, 60V, 90A, TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:272W; Voltage Vgs Max:20V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Operating Temperature175 °C
Max Power Dissipation272 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.75 W
Rds On Max5.5 mΩ
Resistance5.5 MΩ
Rise Time10 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm