공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay SUM52N20-39P-E3에 대한 설명입니다.
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) TO-263
MOSFET N-CH 200V 52A D2PAK
Power Field-Effect Transistor, 52A I(D), 200V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OBSOLETE - USE SUM65N20-30-E3
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:200V; On Resistance Rds(on):31mohm; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:3.12W; Transistor Case Style:D2-PAK; No. of Pins:3; Base Number:52; Capacitance Ciss Typ:4220pF; Package / Case:D2-PAK; Power Dissipation Pd:3.12W; Pulse Current Idm:100A; Reverse Recovery Time trr Typ:133ns; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:200V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)52 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance94 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.22 nF
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
Rds On Max38 mΩ
Reverse Recovery Time133 ns
Rise Time170 ns
TerminationSMD/SMT
Threshold Voltage4.5 V
Turn-Off Delay Time34 ns
Turn-On Delay Time18 ns
Dimensions
Height4.83 mm
Length10.41 mm
Width9.65 mm