가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | SISS80DN-T1-GE3 | 9 | 8 | |||||||||
| Arrow Electronics | SISS80DN-T1-GE3 | 9 | 1 | |||||||||
| TME | SISS80DN-T1-GE3 | 5,904 | 1 | 6h | ||||||||
| DigiKey | 742-SISS80DN-T1-GE3CT-ND | 8,293 | 1 | Cut Tape | ||||||||
| TTI | SISS80DN-T1-GE3 | 0 | 6K | Tape & Reel | 10h |
설명
유통업체에서 제공한 Vishay SISS80DN-T1-GE3에 대한 설명입니다.
Mosfet, N Ch, 20V, 210A, Powerpak 1212 Rohs Compliant: Yes |Vishay SISS80DN-T1-GE3
Transistor MOSFET N-CH 80V 210A 8-Pin PowerPAK 1212 T/R
Avnet Japan
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Power Field-Effect Transistor, 210A I(D), 20V, 0.003ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
5W(Ta),65W(Tc) 12V 1.5V@ 250¦ÌA 122nC@ 10 V 1N 20V 920¦Ì¦¸@ 10A,10V 58.3A,210A 6.45nF@10V PAK-1212-8S
MOSFET N-CH 20V 58.3A/210A PPAK
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)210 A
Drain to Source Resistance3 mΩ
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1