설명
유통업체에서 제공한 Vishay SISS30ADN-T1-GE3에 대한 설명입니다.
Mosfet, N-Ch, 80V/54.7A/Powerpak 1212-8S Rohs Compliant: Yes |Vishay SISS30ADN-T1-GE3
Trans MOSFET N-CH 80V 15.9A 8-Pin PowerPAK 1212-S EP T/R
Power Field-Effect Transistor, 54.7A I(D), 80V, 0.0105ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
Vishay NMOS, Vds=80 V, 54.7 A, powerpak 1212-1e 8S, , 8
MOSFET N-CH 80V 15.9A/54.7A PPAK / N-Channel 80 V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET N-CH 80V 15.9A/54.7A PPAK
제조업체 별칭
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)54.7 A
Drain to Source Resistance10.5 mΩ
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080