Vishay SISF20DN-T1-GE3

Dual N-Channel 60 V 13 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8SCD
$ 0.898
Production
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가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
Onlinecomponents.comSISF20DN-T1-GE35,91550Bulk
TME
2
SISF20DN-T1-GE301
21h
TTISISF20DN-T1-GE306KTape & Reel
8h
Newark
2
SISF20DN-T1-GE301Cut Tape
AvnetSISF20DN-T1-GE306K
9h

데이터시트 및 문서

Vishay SISF20DN-T1-GE3에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

JRH Electronics

Datasheet10 페이지5년 전

Future Electronics

재고 내역

3개월간의 트렌드:
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공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-12-13
Lifecycle StatusProduction (Last Updated: 4 months ago)

설명

유통업체에서 제공한 Vishay SISF20DN-T1-GE3에 대한 설명입니다.

Dual N-Channel 60 V 13 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8SCD
Future Electronics
COMMON-DRAIN DUAL N-CH 60V (S1-S2)MOSFET
Vishay
Power Field-Effect Transistor, 52A I(D), 60V, 0.013ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
Vishay NMOS, Vds=60 V, 52 A, PowerPAK 1212-8SCD, , 8
UnikeyIC
MOSFET 2N-CH 60V 14A/52A PPAK 12
Bettlink
MOSFET DL N-CH 60V PPK 1212-8SCD
Vigor Components
MOSFET, DUAL N-CH, 60V, 52A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
Farnell
Transistor Polarity = N-Channel / Configuration = Dual Common Drain / Continuous Drain Current (Id) A = 52 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 50 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PowerPAK 1212-8SCD / Pins = 8 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69.4
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