공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-27
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
VishaySIS476DN-T1-GE3
Power MOSFET, N Channel, 30 V, 40 A, 0.00205 ohm, PowerPAK 1212, Surface Mount
VishaySIRA04DP-T1-GE3
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
VishaySIRA02DP-T1-GE3
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
STMicroelectronicsSTD40NF03LT4
N-CHANNEL 30V - 0.0090 OHM - 40A DPAK LOW GATE CHARGE STripFET MOSFET
InfineonIRLHM630TRPBF
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
설명
유통업체에서 제공한 Vishay SISA04DN-T1-GE3에 대한 설명입니다.
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
30V 40A 3.7W 2.15m´Î@10V15A 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 EP T/R
MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV
Vishay NMOS TrenchFET, Vds=30 V, 40 A, PowerPAK 1212-8, , 8
Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 40A PPAK1212-8
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.15 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.595 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max2.15 mΩ
Resistance2.15 mΩ
Schedule B8541290080
Threshold Voltage1.1 V
Turn-Off Delay Time30 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm
Length3.1496 mm
Width3.1496 mm