가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIS990DN-T1-GE3CT-ND | 1,220 | 1 | Cut Tape | ||||||||
| Newark | SIS990DN-T1-GE3 | 10 | 1 | Cut Tape | ||||||||
| Verical | SIS990DN-T1-GE3 | 2,497 | 5 | |||||||||
| Arrow Electronics | SIS990DN-T1-GE3 | 2,497 | 1 | |||||||||
| TTI | SIS990DN-T1-GE3 | 39,000 | 3K | Tape & Reel | 23h |
설명
유통업체에서 제공한 Vishay SIS990DN-T1-GE3에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 100V 12.1A 8-Pin PowerPAK 1212 T/R
Dual Mosfet, N-Ch, 100V, Powerpak 1212 Rohs Compliant: Yes |Vishay SIS990DN-T1-GE3
DUAL N-CHANNEL 100-V (D-S) MOSFET
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, POWERPAK 1212;
N-CH POWERPAK1212 BWL 30V 2.2MOHM@10V
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기술 사양
Physical
Case/Package100
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)12.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max85 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time8 ns
Turn-On Delay Time8 ns