공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-27
Lifecycle StatusNRND (Last Updated: 1 month ago)
관련 부품
VishaySIR846DP-T1-GE3
Single N-Channel 100V 0.0078 Ohm Medium Voltage ThunderFET® Mosfet POWERPAK-SO-8
VishaySIR870DP-T1-GE3
MOSFET, N CH, DI, 100V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous
VishaySIR804DP-T1-GE3
MOSFET,N CH,W DIODE,100V,60A,PPAK8; Transistor Polarity:N Channel; Continuous Dr
설명
유통업체에서 제공한 Vishay SIR870ADP-T1-GE3에 대한 설명입니다.
N-Channel 100 V 6.6 mOhm 25.5 nC SMT Power MOSFET - PowerPAK-SO-8
Power MOSFET, N Channel, 100 V, 60 A, 0.0055 ohm, PowerPAK SO, Surface Mount
MOSFET, N-CH, 100V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.866 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation104 W
Rds On Max6.6 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Dimensions
Height1.12 mm
Length6.25 mm
Width5.26 mm