공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-09-14
LTD Date2019-03-14
관련 부품
InfineonIRFH7934TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
onsemiFDMS0308AS
2.5W(Ta),50W(Tc) 20V 3V@1mA 47nC@ 10 V 1N 30V 2.8m¦¸@ 24A,10V 24A,49A 3nF@15V QFN 6mm*5mm*1.1mm
InfineonIRFH8316TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Vishay SIR788DP-T1-GE3에 대한 설명입니다.
Trans MOSFET N-CH 30V 28.6A 8-Pin PowerPAK SO T/R
N-CHANNEL 30 V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.873 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max3.4 mΩ
Rise Time11 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time21 ns
Dimensions
Height1.12 mm
Length6.25 mm
Width5.26 mm