가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIR5802DP-T1-RE3 | 15,576 | 5 | Cut Tape | ||||||||
| Arrow Electronics | SIR5802DP-T1-RE3 | 3,000 | 3K | |||||||||
| Verical | SIR5802DP-T1-RE3 | 3,000 | 3K | |||||||||
| DigiKey | 742-SIR5802DP-T1-RE3CT-ND | 5,596 | 1 | Cut Tape | ||||||||
| TTI | SIR5802DP-T1-RE3 | 9,000 | 3K | Tape & Reel | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
설명
유통업체에서 제공한 Vishay SIR5802DP-T1-RE3에 대한 설명입니다.
Mosfet, N-Ch, 80V, 137.5A, Powerpak So Rohs Compliant: Yes |Vishay SIR5802DP-T1-RE3
Power Field-Effect Transistor, 137.5A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
Trans MOSFET N-CH 80V 33.6A 8-Pin PowerPAK SO EP T/R
Vishay NMOS N-Channel 80 V, Vds=80 V, 137.5 A, PowerPak SO-8, , 8
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- VIS
- VISH
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- Vishay Thin Film
- Vishay Intertechnology
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- VSHAY
- VISH/IR
- VSHY
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)137.5 A
Drain to Source Resistance4 mΩ
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1