공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2023-05-07
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Vishay SIR5607DP-T1-RE3에 대한 설명입니다.
6.25W(Ta),104W(Tc) 2.6V@ 250¦ÌA 112nC@ 10 V 1P 60V 7m¦¸@ 20A,10V 90.9A 5.02nF@30V SOIC-8
MOSFET, P-CH, 60V, 90.9A, POWERPAK SO-8S ROHS COMPLIANT: YES
P-CHANNEL 60-V (D-S) MOSFET
Power Field-Effect Transistor, 90.9A I(D), 60V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH SINGLE -40V PPAK SO-8
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)90.9 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Turn-Off Delay Time40 ns
Turn-On Delay Time18 ns
Dimensions
Height1.12 mm